Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: MOSpipeDescription: NChannel 30V (D-S), 175-LC MOSFET N-Channel 30-V (D-S), 175-LC MOSFET2223 -
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Category: Bipolar transistorDescription: Low saturation voltage NPN transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia2178 -
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Category: MOSpipeDescription: VISHAY SQJ941EP-T1-GE3 Dual MOSFET, Dual P Channel, -8A, -30V, 0.02Ω, -10V, -2V9618 -
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Category: MOSpipeDescription: N Channel MOSFET, Vishay Semiconductor # # MOSFET transistor, Vishay Semiconductor5282 -
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Category: MOSpipeDescription: NChannel Enhancement Mode Logic LevelExcellent Gate Charge x RDS (on) Product (FOM) N-Channel Enhancement Mode Logic LevelExcellent Gate Charge x RDS (on) Product (FOM)1587 -
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Category: Bipolar transistorDescription: 2SC5714 Transistor NPN 40V 4A HEF=400~1000 SOT89 Code 2E2062 -
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Category: IGBTtransistorDescription: IGBT The Infineon * * Infineon * * series IGBT modules provide low switching losses for switching frequencies up to 60 kHz. IGBT spans a series of power modules, such as ECONOPACK package, with open collector emitter voltage at 1200V; PrimePACK IGBT half bridge chopper module with NTC up to 1600/1700V. PrimePACK IGBT can be found in industrial, commercial, construction, and agricultural vehicles. The N-channel TRENCHSTOP TM and Fieldstop IGBT modules are suitable for both hard switching and soft switching applications, such as inverters, UPS, and industrial drives. Package types include: 62mm module, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 # # # IGBT discrete parts and modules, Infineon insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.9927 -
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Category: MOSpipeDescription: NXP PSMN4R4-80PS Transistor, MOSFET, N-channel, 100 A, 80 V, 3.3 Mohm, 10 V, 3 V2616 -
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Category: MOSpipeDescription: SEMIKRON SK85MH10T Single transistor bipolar, enhancement mode, N-channel, 80 A, 100 V, 0.0075 ohm, 10 V, 3.3 V4133 -
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Category: IGBTtransistorDescription: Step down chopper channel+station IGBT ® Power module Buck chopper Trench+Field Stop IGBT ® Power Module2633
